Mask and method for making the same, and method for making...

Details Mask and method for making the same, and method for making... Mask and method for making the same, and method for making...

2005-10-18

2005-10-18

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S708000, C438S942000, C430S005000, C430S312000

Reexamination Certificate

active

06955993

ABSTRACT:
A mask capable of alignment by the TTR system and complementary division and having a high strength, a method of production of the same, and a method of production of a semiconductor device having a high pattern accuracy are provided. A stencil mask having stripe-shaped grid lines4formed by etching a silicon wafer in four sub-regions A to D on a membrane, having the stripes arranged point symmetrically about a center of the membrane, and having all of the grid lines connected to other grid lines or the silicon wafer around the membrane (support frame), a method of production of the same, and a method of production of a semiconductor device using the mask.

REFERENCES:
patent: 5849437 (1998-12-01), Yamazaki et al.
patent: 6376137 (2002-04-01), Okino
patent: 2001/0046631 (2001-11-01), Fujiwara et al.
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patent: 2003-059819 (2003-02-01), None

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