Mask and method for crystallizing amorphous silicon

Details Mask and method for crystallizing amorphous silicon Mask and method for crystallizing amorphous silicon

2006-03-28

2006-03-28

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07018750

ABSTRACT:
A method of crystallizing amorphous silicon includes forming an amorphous silicon layer on a substrate, placing a mask over the substrate including the amorphous silicon layer, and applying a laser beam onto the amorphous silicon layer through the mask to form a first crystallized region, the laser beam having an energy intensity high enough to completely melt the amorphous silicon layer, wherein the mask comprises a base substrate, a phase shift layer on the base substrate, having a plurality of first stripes having a first width separated by slits, and a blocking layer overlapping the phase shift layer, having a plurality of second stripes having a second width narrower than the first width, the second stripes being parallel to the first stripes.

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Y. Sano, et al., “Highly Packed and Ultra-Large Si Grains Grown by a Single-shot Irradiation of Excimer-Laser Light Pulse”, Department of Physical Electronics, Tokyo Institute of Technology, (2001) 8 pages.
Robert S. Sposili et al., “Single-Crystal Si Films Via A Low-Substrate-Temperature Excimer-Laser Crystallization Method,” Im. Mat. Res. Soc. Symp. Proc., vol. 452, pp. 953-958.

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