Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2007-12-18
2010-06-01
Huff, Mark F (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C524S434000
Reexamination Certificate
active
07727684
ABSTRACT:
A blank mask is provided. The blank mask includes a mask layer disposed on a transparent quartz substrate, and a nano inorganic material-polymer complex layer. The nano inorganic material-polymer complex layer has nano-scale components and is formed on a surface of the mask layer to adsorb a residual contamination source remaining on the surface of the mask layer and to protect the surface of the mask layer from external contamination sources. The nano inorganic material-polymer complex layer can include a nano clay-polymer composite where PVDF is interposed between the nano clay plate-shaped layers. The contamination sources can be removed from the mask layer surface by removing the composite layer.
REFERENCES:
patent: 7094503 (2006-08-01), Ray et al.
patent: 2001/0044077 (2001-11-01), Tan
patent: 2004/0019143 (2004-01-01), Koloski et al.
patent: 2006/0155035 (2006-07-01), Metzemacher et al.
patent: 2007/0012189 (2007-01-01), Kang et al.
patent: 10-2005-0123264 (2005-12-01), None
patent: 10-2006-0069602 (2006-06-01), None
patent: WO 2006/105273 (2006-10-01), None
Fraser Stewart A
Huff Mark F
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
LandOfFree
Mask and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Mask and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mask and manufacturing method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4230777