Mask and its manufacturing method, and method for...

Details Mask and its manufacturing method, and method for... Mask and its manufacturing method, and method for...

2006-04-04

2006-04-04

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

C430S005000, C430S312000, C430S311000, C430S313000

Reexamination Certificate

active

07022607

ABSTRACT:
To provide a mask able to reduce the thickness of a membrane and maintain the mask strength and a method of producing a semiconductor device able to form a fine pattern with a high accuracy and a method of producing the mask. A mask comprising a thin film, holes formed at the thin film through which a charged particle beam (preferably an electron beam) passes, a support layer formed at one side of the thin film, and apertures formed at a larger size than the holes at least at portions of said holes of said support layer and a method of producing the same and a method of producing a semiconductor device including a lithography step using the same.

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H.C. Pfeiffer et al., Journal of Vacuum Science and technology, B17, p. 117-125, “Low Energy e-beam Proximity Projection Lithography”.

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