Mask and exposure apparatus

Details Mask and exposure apparatus Mask and exposure apparatus

2011-01-04

2011-01-04

Huff, Mark F (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C355S075000

Reexamination Certificate

active

07862961

ABSTRACT:
An exposure apparatus transfers a pattern from a mask onto a sensitive substrate. A film protects the mask, and a film frame, between the mask and the film, holds the film spaced away from a surface of the mask. The film has a first transmittance for radiation of a necessary wavelength and has a second transmittance for radiation of an unnecessary wavelength; the first transmittance is higher than the second transmittance. The film might reflect or absorb the unnecessary wavelength. The necessary wavelength may be an exposure wavelength and may also be in the range of extreme ultra violet radiation. An atmosphere around the mask transitions from an air atmosphere to a reduced-pressure atmosphere, or from a reduced-pressure atmosphere to an air atmosphere, at a speed that allows a difference between a pressure applied to one surface of the film and a pressure applied to the other surface of the film to be held at a predetermined value or smaller.

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Werner A. Goedel, “From Monolayers of a Tethered Polymer Melt to Freely Suspended Elastic Membranes”, 1998 American Chemical Society, Chapter 2, pp. 10-30.
Shroff et al., “EUV Pellicle Development for Mask Defect Control”, SPIE, vol. 6151 615104-1, Mar. 22, 2006.
Shroff, Yashesh et al., EUV Pellicle Development for Mask Defect Control, Proc. of SPIE vol. 6151, 615104-1, (Mar. 22, 2006).

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