Mask alignment scheme for laterally and totally dielectrically i

Details Mask alignment scheme for laterally and totally dielectrically i Mask alignment scheme for laterally and totally dielectrically i

1980-12-04

1982-01-12

Massie, Jerome W.

Metal working

Method of mechanical manufacture

Assembling or joining

156647, 156657, 1566591, 356401, 430 22, G03F 900, H01L 21308

Patent

active

043098134

ABSTRACT:
A support material rectangle indicia is formed during the formation of the dielectrical isolation of starting material islands in one of said dielectrically isolated islands. An X indicia on a mask is positioned over the four corners of rectangular indicia to align the mask and the substrate.

REFERENCES:
patent: 3544801 (1970-12-01), Dyck
patent: 3617267 (1971-11-01), Kinney
patent: 3623218 (1971-11-01), Mitari et al.
patent: 3739247 (1973-03-01), Yamaguchi et al.
patent: 3752589 (1973-08-01), Kobayashi
patent: 3796497 (1974-03-01), Mathisen et al.
patent: 3844858 (1974-10-01), Bean
patent: 3861798 (1975-01-01), Kobayashi et al.
patent: 3963489 (1976-06-01), Cho
patent: 3998673 (1976-12-01), Chow
patent: 4015034 (1977-03-01), Smolen
patent: 4050979 (1977-09-01), Smeltzer et al.
patent: 4052603 (1977-10-01), Karlson
patent: 4070117 (1978-01-01), Johannsmeier et al.
patent: 4153371 (1979-05-01), Koizumi et al.
patent: 4233091 (1980-11-01), Kawabe
patent: 4251160 (1981-02-01), Bouhuis et al.

Affiliated with

Also associated with

Rating

Mask alignment scheme for laterally and totally dielectrically i does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mask alignment scheme for laterally and totally dielectrically i, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mask alignment scheme for laterally and totally dielectrically i will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1535709