Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Reexamination Certificate
2008-01-14
2009-11-17
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
C438S106000, C438S107000, C438S462000, C438S464000, C257SE21525, C257SE21599
Reexamination Certificate
active
07618875
ABSTRACT:
A product information marking method including a back side grinding step for grinding the back side of a wafer having a plurality of devices formed on the front side so as to be partitioned by a plurality of separation lines, thereby obtaining a desired thickness of the wafer. After performing the back side grinding step, a marking step for marking product information on the back side of each device by applying a laser beam to the back side of the wafer is performed before separating the devices from each other. Thus, the product information is marked on each device in the stage of the wafer.
REFERENCES:
patent: 2003/0017652 (2003-01-01), Sakaki et al.
patent: 2004/0113283 (2004-06-01), Farnworth et al.
patent: A 5-121573 (1993-05-01), None
patent: A 5-166949 (1993-07-01), None
Disco Corporation
Greer Burns & Crain Ltd
Lee Kyoung
Richards N Drew
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