Marker structure, mask pattern, alignment method and...

Optics: measuring and testing – By alignment in lateral direction – With registration indicia

Reexamination Certificate

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Reexamination Certificate

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07466413

ABSTRACT:
A mask pattern for imaging a marker structure on a substrate with a lithographic apparatus, the marker structure being configured to determine optical alignment or overlay, includes constituent parts to define the marker structure. The constituent parts include a plurality of segments, each segment having substantially a size of a device feature and a segment shape. The mask pattern includes at least one assist feature located at a critical part of the segment shape. The at least one assist feature has substantially a size below a resolution of the lithographic projection and is configured to counteract optical aberrations or optical limitations generated in the lithographic projection at the critical part.

REFERENCES:
patent: 5418613 (1995-05-01), Matsutani
patent: 6165656 (2000-12-01), Tomimatu
patent: 6301001 (2001-10-01), Unno
patent: 6323560 (2001-11-01), Narimatsu et al.
patent: 6982793 (2006-01-01), Yang et al.
patent: 7046361 (2006-05-01), Yang et al.
patent: 7175945 (2007-02-01), Mieher et al.
patent: 7177457 (2007-02-01), Adel et al.
patent: 7181057 (2007-02-01), Adel et al.
patent: 2002/0093110 (2002-07-01), Fujimoto
patent: 2002/0118349 (2002-08-01), Yang et al.
patent: 2003/0026471 (2003-02-01), Adel et al.
patent: 2005/0195398 (2005-09-01), Adel et al.
patent: 2006/0204073 (2006-09-01), Ghinovker et al.
patent: 1 162 507 (2001-12-01), None
patent: 1 260 869 (2002-11-01), None
patent: 1 260 870 (2002-11-01), None
patent: 2 358 714 (2001-08-01), None
patent: 2001-22051 (2001-01-01), None
patent: 2003-7614 (2003-01-01), None
Translation of Japanese Office Action issued in Japanese Application No. 2004-202539 dated Jul. 10, 2007.

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