Marked single-crystal III-V group compound semiconductor wafer

Details Marked single-crystal III-V group compound semiconductor wafer Marked single-crystal III-V group compound semiconductor wafer

1984-11-19

1986-12-30

O'Keefe, Veronica

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

148DIG102, H01L 21304

Patent

active

046328840

ABSTRACT:
In a rectangular, square or other shaped single-crystal wafer of a III-V group compound semiconductor, one corner of the wafer is cut off, provided with a marking, or the wafer has a part of the original shape of the grown single-crystal ingot left intact on one side of the wafer. With the wafers thus formed, it can be distinguished between the front and back sides of the wafer, or also the direction in which a V groove etch is to occur can be identified.

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patent: 4468857 (1984-09-01), Christian et al.
patent: 4489139 (1984-12-01), Ohta et al.
Warren C. Rosvold et al, IEEE Trans. on Electron Dev., vol. Ed-15, No. 9, Sep. 1968, pp. 640-644.
R. A. Leone et al., IBM Tech. Disc. Bull., vol. 14, No. 2, Jul. 1971, p. 417.
H. E. Korth, IBM Tech. Disc. Bull., vol. 18, No. 3, Aug. 1975, p. 785.
Won-Tieu Tsang et al, Appl. Phys. Letters, vol. 28, No. 1, Jan. 1, 1976, pp. 44-46.
R. C. Stevens et al, IBM Techn. Disclosure Bull., vol. 14, No. 3, Aug. 1971, p. 749.

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