Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Reexamination Certificate
2011-06-15
2011-12-20
Lee, Calvin (Department: 2892)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
C438S462000, C257S797000
Reexamination Certificate
active
08080462
ABSTRACT:
A method for forming a mark structure on a substrate comprising a plurality of lines. The lines extend parallel to each other in a first direction and are arranged with a pitch between each pair of lines that is directed in a second direction perpendicular to the first direction. The pitch between each pair of selected lines differs from the pitch between each other pair of selected lines.
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ASML Netherlands B.V.
Lee Calvin
Sterne Kessler Goldstein & Fox P.L.L.C.
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