Mark forming method and method for manufacturing...

Details Mark forming method and method for manufacturing... Mark forming method and method for manufacturing...

2011-07-05

2011-07-05

Blum, David S (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

C257SE21529, C257SE23179

Reexamination Certificate

active

07972932

ABSTRACT:
A mark forming method includes forming a first mask layer on a semiconductor substrate; forming at least three first patterns having periodicity on the first mask layer; forming a second mask layer on the first mask layer having the first patterns formed thereon; and forming an opening in the second mask layer to cover at least two patterns on ends of the at least three first patterns, thereby forming a mark composed of exposed ones of the first patterns.

REFERENCES:
patent: 6933204 (2005-08-01), Sarma et al.
patent: 7220655 (2007-05-01), Hause et al.
patent: 2007/0052114 (2007-03-01), Huang et al.
patent: 2007/0210394 (2007-09-01), Kanakasabapathy et al.
patent: 2009/0166899 (2009-07-01), Van Haren
patent: 2002-64055 (2002-02-01), None

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