Mapping yield information of semiconductor dice

Data processing: measuring – calibrating – or testing – Measurement system – Statistical measurement

Reexamination Certificate

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C438S005000

Reexamination Certificate

active

07440869

ABSTRACT:
In one exemplary embodiment, yield information of semiconductor dice is mapped by obtaining yield information of a first die that was formed on a first location on a first wafer. Yield information is obtained of a second die that was formed on a second location on a second wafer. A portion of the first location corresponds to a portion of the second location such that the portion of the first location would overlap with the portion of the second location if the first location was on the second wafer. A plurality of pixel elements is defined. Each pixel element corresponds to a different location on a wafer, and at least one of the plurality of pixel elements corresponds to the portion of the first location that corresponds to the portion of the second location. An average yield is determined for the at least one of the plurality of pixel elements based on the yield information of the first die and the second die. A deviation is determined for the at least one of the plurality of pixel elements based on the average yield of the at least one of the plurality of pixel elements and the yield information of the first die and the second die.

REFERENCES:
patent: 5598341 (1997-01-01), Ling et al.
patent: 6345211 (2002-02-01), Yu
patent: 6393602 (2002-05-01), Atchison et al.
patent: 6545369 (2003-04-01), Hatab
patent: 6777677 (2004-08-01), Nozoe et al.
patent: 7013192 (2006-03-01), Whitefield et al.
patent: 2004/0138846 (2004-07-01), Buxton et al.

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