Fishing – trapping – and vermin destroying
Patent
1990-03-08
1991-07-23
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
148DIG135, 437 62, 437228, 437974, H01L 2120, H01L 2176
Patent
active
050343432
ABSTRACT:
A process including bonding a first device wafer to a handle wafer by an intermediate bonding oxide layer and thinning the device wafer to not greater than 7 mils. An epitaxial device layer of under 1 mil may be added. Device formation steps are performed on a first surface of the first device wafer. This is followed by removing the handle wafer to produce a resulting wafer having substantially the thickness of the first device layer. To produce a silicon on insulator (SOI), a third device wafer is bonded to the first surface of the first device wafer by the intermediate oxide layer and the third wafer is thinned to not greater than 40 microns. The first and third device wafers form the resulting SOI wafer.
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McLachlan Craig J.
Reinecke Paul S.
Rouse George V.
Chaudhuri Olik
Harris Corporation
Horton Kenneth
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