Manufacturing ultra-thin dielectrically isolated wafers

Details Manufacturing ultra-thin dielectrically isolated wafers Manufacturing ultra-thin dielectrically isolated wafers

1991-03-07

1992-01-14

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 86, 437974, H01L 2176

Patent

active

050810618

ABSTRACT:
A method including filling etched moats with a first dielectric layer and layer of polycrystalline material and planarizing. A second dielectric layer is formed on the first polycrystalline layer and a second layer of polycrystalline is formed on the second dielectric layer to form a handle. The starting material is then thinned to produce the dielectric isolated islands. Device forming steps are then performed. Finally, the handle is removed leaving a wafer having a thickness defined by the planarized surface of the first polycrystalline layer and the top surface of the first wafer.

REFERENCES:
patent: 3508980 (1970-04-01), Jackson et al.
patent: 3689357 (1970-12-01), Jordan

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