Manufacturing sintered body of silicon carbide by using SiC whis

Details Manufacturing sintered body of silicon carbide by using SiC whis Manufacturing sintered body of silicon carbide by using SiC whis

1991-10-01

1993-08-10

Chaudhuri, Olik

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

501 88, 501 95, 264 65, 264 66, C04B 3556, C01B 3136

Patent

active

052346757

ABSTRACT:
An organosilicon high molecular compound having a skeleton of silicon and carbon or a compound obtained by polymerization of an organometallic compound and the organosilicon high molecular compound is melted into a fiber, then the fiber is antimelt-treated in an oxidizing atmosphere, and the antimelt-treated yarns are thereafter heated in an atmosphere of inert gas to obtain a fiber of silicon carbide containing 2 to 20% by volume of oxygen. This fiber is further sintered in an atmosphere of inert gas at a temperature of 1400 to 2100 deg. C. and a pressure of 300 to 3000 kg/cm.sup.2. A sintered body of silicon carbide having an excellent bending strength is obtained without the use of a sintering agent or a binder. A fiber of silicon carbide having a predetermined oxygen content and a thin amorphous carbon layer thereon is obtained from the starting fiber by antimelt-treating and then heating in an atmosphere of a mixture of an inert gas and a hydrocarbon gas. Silicon carbide powder is mixed with the fiber thus obtained and the mixture is then heated in an atmosphere of inert gas under pressure. The sintered body thus obtained has a high strength and a remarkably small decrease in strength at high temperature.

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