Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1981-03-31
1982-08-10
Massie, Jerome W.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
51323, 156636, 156645, 156662, 156345, H01L 2122, H01L 21304, H01L 21306
Patent
active
043436625
ABSTRACT:
A method of forming semiconductor devices incorporates etching during the slicing of a semiconductor ingot from which semiconductor wafers are formed. In addition, a partial slicing through the ingot yields partially cut wafers which are maintained integral beyond a diffusion step. Grinding is then employed to remove unwanted material, to shape, and to accomplish the separation of the wafers. A doped, silicon ingot is used with a solution of sodium hydroxide or potassium hydroxide as the etchant. With the ingot in the [111] type of crystal orientation, the etching proceeds readily adjacent to the slicing cuts to facilitate the slicing, and proceeds slowly elsewhere to minimize material wastage. As a result, the formation of extremely thin wafers with minimal cutting loss is possible.
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patent: 3979239 (1976-09-01), Walsh
Gay, "Chemically . . . Ingots", ARCO Solar Inc., Chatsworth, Ca. (279), pp. 1-15.
Atlantic Richfield Company
Massie Jerome W.
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