Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2011-06-28
2011-06-28
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S399000, C438S597000, C257SE21008, C257SE21011
Reexamination Certificate
active
07968420
ABSTRACT:
A method for manufacturing a semiconductor device, includes: forming an insulating film on a substrate; selectively removing the insulating film, so as to form a groove including a first groove area having a first depth and a second groove area having a second depth, the second depth being smaller than the first depth; infusing a conductive liquid material into the first groove area and the second groove area; treating the conductive liquid material, so as to form a first conductive film in the first groove area and a second conductive film in the second groove area; and forming a second insulating film on the first and the second conductive films, followed by forming a third conductive film on the second insulating film.
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Ghyka Alexander G
Nikmanesh Seahvosh J
Oliff & Berridg,e PLC
Seiko Epson Corporation
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