Manufacturing process to eliminate polystringers in high density

Details Manufacturing process to eliminate polystringers in high density Manufacturing process to eliminate polystringers in high density

1997-12-18

1999-11-30

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438719, 438742, 438751, H01L 2100

Patent

active

059942398

ABSTRACT:
Polystringers that cause NAND-type memory core cells to malfunction are removed. A SiON layer, tungsten silicide layer, second polysilicon layer, ONO dielectric, and first polysilicon layer are successively removed from between NAND-type flash memory core cells leaving ONO fence that shields some first polysilicon layer material from removal. Next, the device is exposed to oxygen gas in a high temperature environment to oxidize the surface of the device, and in particular to remove the polystringers.

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