Manufacturing process of semiconductor devices

Details Manufacturing process of semiconductor devices Manufacturing process of semiconductor devices

1978-11-16

1980-07-01

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29580, 148189, 156625, H01L 2122

Patent

active

042104726

ABSTRACT:
Process of manufacturing semiconductor devices by providing on the surface of a substrate of one conductivity at first only a covering with a doping agent of the other conductivity and then, after the building of mesas, the PN-junction is formed by diffusion in an oxidizing atmosphere whereby simultaneously a protecting SiO.sub.2 layer is formed on the free surface of the mesa.

REFERENCES:
patent: 3354008 (1967-11-01), Brixey et al.
patent: 3737702 (1973-06-01), Kooi et al.
patent: 3972113 (1976-08-01), Nakata et al.

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