Manufacturing process of a stacked semiconductor device

Metal working – Method of mechanical manufacture – Electrical device making

Reexamination Certificate

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C029S830000, C029S833000, C029S835000, C029S836000, C156S089110, C156S089150, C257S686000, C257S777000, C257S778000, C438S106000, C438S114000, C438S464000

Reexamination Certificate

active

10745296

ABSTRACT:
A manufacturing process of a stacked semiconductor device, comprising the following steps: integrating a plurality of electronic devices in a plurality of active areas realized in a semiconductor wafer; distributing an adhesive layer on active areas, splitting the semiconductor wafer into a plurality of first dies, each one comprising at least one of the active areas; mounting the plurality of first dies, which are already equipped with the adhesive layer, on a support; and mounting a plurality of second dies on the adhesive layer.

REFERENCES:
patent: 5286679 (1994-02-01), Farnworth et al.
patent: 5495398 (1996-02-01), Takiar et al.
patent: 6040204 (2000-03-01), Herden et al.
patent: 6165815 (2000-12-01), Ball
patent: 6337225 (2002-01-01), Foong et al.
patent: 6344401 (2002-02-01), Lam
patent: 6723620 (2004-04-01), Pavier
patent: 2001/0005935 (2001-07-01), Tandy
patent: 2002/0090753 (2002-07-01), Pai et al.
patent: 2002/0096755 (2002-07-01), Fukui et al.
patent: 2002/0155638 (2002-10-01), Uchida
patent: 0 185 244 (1986-06-01), None

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