Manufacturing process of a microelectronic device containing, on

Etching a substrate: processes – Nongaseous phase etching of substrate – With measuring – testing – or inspecting

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216 13, 216 41, 438 14, 438129, H01L 2100, B44C 122

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active

058536035

ABSTRACT:
A method of manufacturing a microelectric device containing, on a substrate, a plurality of interconnected elements, comprising the steps of manufacturing on a substrate cells of elements, testing of the cells in order to distinguish the valid cells, formation of junction bands in an electrical conductive material connecting at least one valid cell, the junction bands being formed in fields, each field comprising an overlapping area with at least one neighboring field.

REFERENCES:
patent: 3585712 (1971-06-01), Boncuk
patent: 4753901 (1988-06-01), Ellsworth et al.
patent: 4786613 (1988-11-01), Gould et al.
patent: 4969029 (1990-11-01), Ando et al.
IEEE Journal of Solid-State Circuits, vol. SC-16, No. 5, pp. 506-514, Oct., 1981 Robert T. Smith, et al., "Laser Programmable Redundancy and Yield Improvement in a 64K DRAM".
International Conference on Wafer Scale Integration, p. 193-201, 1989, Dr. Jacques Trilhe "A 4 MBIT Static RAM".

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