Manufacturing process for ultra slim electrooptic display...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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C438S458000, C438S057000

Reexamination Certificate

active

06982181

ABSTRACT:
To obtain a high intensity, high definition and sophisticated electrooptic display device unit such as transmissive type LCD, a semi-transmissive type LCD, a reflective type LCD, a surface emitter type organic EL, or an underside emitter type organic EL, etc. which has high electron and positive hole mobility and low leak electric current qualities.A porous semiconductor layer (low porous Si layer11a/high porous Si layer11b/low porous Si layer11c), a monocrystalline Si layer12a, and the Si O2layer13aare formed on a monocrystalline Si substrate10. The Si O2layer13aof the peripheral circuit area is removed, leaving the Si O2layer13ain the display area. The poly Si layer14ais formed in the display area by semiconductor epitaxial growth, and a monocrystalline Si layer12bis formed in the peripheral circuit area. Then, the display element section is formed in the poly Si layer14of the display area and the peripheral circuitry section is formed in the monocrystalline Si layer12bof the peripheral circuit area. The assembly is divided into each ultra slim electrooptic display device unit after separation from the backing, and after the process of separating the Si substrate10from the porous Si layer11band by attaching the backing to the ultra slim electrooptic display element substrate after its separation. Each ultra slim electrooptic display device unit is divided after attaching the backing.

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patent: 09-312349 (1997-02-01), None

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