Manufacturing process for obtaining integrated structure bipolar

Details Manufacturing process for obtaining integrated structure bipolar Manufacturing process for obtaining integrated structure bipolar

1995-03-21

1997-04-29

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Radiation or energy treatment modifying properties of...

438904, 438356, H01L 21265

Patent

active

056248520

ABSTRACT:
Integrated structure bipolar transistors with controlled storage time are manufactured by forming at least one bipolar transistor occupying a first area on a first surface of the silicon material, covering the first surface of the silicon material with an insulating material layer, and selectively removing the insulating material layer to open a window. The window has a second area much smaller than the first area occupied by the bipolar transistor. Therefore, by implanting into the silicon material a medium dose of platinum ions through the window and diffusing into the silicon material the implanted platinum ions, a uniform distribution of platinum inside the transistor is obtained.

REFERENCES:
patent: 3640783 (1972-02-01), Bailey
patent: 4777149 (1988-10-01), Tanabe et al.
patent: 4925812 (1990-05-01), Gould
patent: 5227315 (1993-07-01), Frisina et al.
patent: 5468660 (1995-11-01), Frisina et al.
Journal of Applied Physics, Jul. 1, 1993, USA, vol. 74, nr. 1, pp. 195-200, ISSN 0021-8979, Coffa S. et al. "Three-Dimensional Concentration Profiles of Hybrid Diffusers In Crystalline Silicon".
Ion Implantation Technology. Ninth International Conference, Gainesville, FL, USA, 20-24 Sep. 1992, ISSN 0169-483X, Nuclear Instruments & Methods in Physics Research, Section B (Beam Interactions with Materials and Atoms), Apr. 1993, Netherlands, pp. 47-52, Coffa S. et al. "Diffusion and Lifetime Engineering Silicon".

Affiliated with

Also associated with

Rating

Manufacturing process for obtaining integrated structure bipolar does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing process for obtaining integrated structure bipolar, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing process for obtaining integrated structure bipolar will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-705241