Manufacturing process for high-purity phosphors having utility i

Details Manufacturing process for high-purity phosphors having utility i Manufacturing process for high-purity phosphors having utility i

1997-11-19

1999-05-25

Bonner, Melissa

Compositions

Inorganic luminescent compositions

Compositions containing halogen; e.g., halides and oxyhalides

2523014H, 2523014P, 2523014F, 2523015, 2523016R, 2523016S, 2523016F, 2523016P, 2523014S, C09K 1100, C09K 1108

Patent

active

059067713

ABSTRACT:
A process is provided for manufacturing high-purity phosphors having utility in field emission displays. The high-purity phosphor is a host lattice infiltrated by a dopant that activates luminescent properties therein. The lattice and dopant are initially milled together to reduce their average particle size while simultaneously achieving complete mixing between the lattice and the dopant. The resulting mixture is maintained free of a flux or substantially any other treatment agent capable of contaminating the phosphor and placed in a heating vessel formed from a substantially impervious contaminant-free material. The mixture is heated to a high temperature effectuating thorough infiltration of the dopant into the lattice structure. The use of an impervious contaminant-free heating vessel and the exclusion of flux or other treatment agents from the mixture avoids undesirable contamination and undue particle size growth of the phosphor product during the manufacture thereof. Accordingly, product is a high-purity phosphor having a small average particle size, yet exhibiting sufficient luminescent efficiencies for utility in field emission displays as a luminescent coating for the anode screen.

REFERENCES:
patent: 3965031 (1976-06-01), Klein et al.
patent: 4024069 (1977-05-01), Larach
patent: 4100454 (1978-07-01), Hase et al.
patent: 4119562 (1978-10-01), Kagami et al.
patent: 4191662 (1980-03-01), Mathers et al.
patent: 4215289 (1980-07-01), De Hair et al.
patent: 4275333 (1981-06-01), Kagami et al.
patent: 4350604 (1982-09-01), Awazy et al.
patent: 4370287 (1983-01-01), Thompson
patent: 4469619 (1984-09-01), Ohno et al.
patent: 4524300 (1985-06-01), Rutten et al.
patent: 4719387 (1988-01-01), Catherall
patent: 4791336 (1988-12-01), Morimoto et al.
patent: 4822696 (1989-04-01), Lammers et al.
patent: 4840747 (1989-06-01), Fan et al.
patent: 4894583 (1990-01-01), Berkstresser et al.
patent: 4924593 (1990-05-01), Morita et al.
patent: 4925593 (1990-05-01), Borchardt et al.
patent: 5104573 (1992-04-01), Ono et al.
patent: 5115306 (1992-05-01), Tsuda et al.
patent: 5140449 (1992-08-01), Sluzky et al.
patent: 5185553 (1993-02-01), Yang et al.
patent: 5202777 (1993-04-01), Sluzky et al.
patent: 5213712 (1993-05-01), Dole
patent: 5229331 (1993-07-01), Doan et al.
patent: 5232549 (1993-08-01), Cathey et al.
patent: 5367173 (1994-11-01), Morlotti
patent: 5455489 (1995-10-01), Bhargava
patent: 5601751 (1997-02-01), Watkins et al.
Wanmaker, William L. et al., "Luminescence of Phosphates", Chemical Abstracts, vol. 69, No. 16, Oct. 14, 1968.
Su, MIan Zeng et al., "The Reaction Mechanism for the Synthesis of Europium(2+)-Activated Barium Fluoride Chloride", Chemical Abstracts, vol. 99, No. 20, Nov. 14, 1983.
Mitsui Toatsu Chem Inc., "Preparation of Particulate Phosphor", Japanese Patent Application No. 1,178,583, Patent Abstracts of Japan, vol. 13, No. 461, Oct. 18, 1989.
Rao, R. P., "Preparation and Characterization of Fine-Grain Yttrium-Based Phosphors by Sol-Gel Process", Journal of the Electrochemical Society, vol. 143, No. 1, Jan. 1996, pp. 189-197.

Affiliated with

Also associated with

Rating

Manufacturing process for high-purity phosphors having utility i does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing process for high-purity phosphors having utility i, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing process for high-purity phosphors having utility i will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-400011