Manufacturing process for embedded semiconductor device

Details Manufacturing process for embedded semiconductor device Manufacturing process for embedded semiconductor device

2011-04-12

2011-04-12

Blum, David S (Department: 2813)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Metallic housing or support

C257SE23173

Reexamination Certificate

active

07923299

ABSTRACT:
A manufacturing process for an embedded semiconductor device is provided. In the manufacturing process, at least one insulation layer and a substrate are stacked to each other, and a third metal layer is laminated on the insulation layer to embed a semiconductor device in the insulation layer. The substrate has a base, a first circuit layer, a second circuit layer, and at least a first conductive structure passing through the base and electrically connected to the first circuit layer and the second circuit layer. In addition, the third metal layer is patterned to form a third circuit layer having a plurality of third pads.

REFERENCES:
patent: 2001/0027605 (2001-10-01), Nabemoto et al.
patent: 2007/0145577 (2007-06-01), Zeng et al.
patent: 2009/0188703 (2009-07-01), Ito et al.

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