Manufacturing process for a raised capacitor electrode

Details Manufacturing process for a raised capacitor electrode Manufacturing process for a raised capacitor electrode

1998-02-12

1999-12-21

Bowers, Charles

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438244, 438253, H01L 2120

Patent

active

060048565

ABSTRACT:
A raised basic structure is first made from a conducting or nonconducting, easily structurable substitute material. Electrode material, such as platinum, is then sputtered onto the basic structure. The layer thickness of the electrode material is greater on the surface and on the side walls of the basic structure than on the neighbouring surface. After a subsequent anisotropic etching process, the electrode material remains only on the basic structure, including the top surface and the side walls. The process is applicable to memory cells having a capacitor dielectric with a high-.epsilon.-dielectric or ferroelectric material.

REFERENCES:
patent: 5352622 (1994-10-01), Chung
patent: 5706164 (1998-01-01), Jeng
patent: 5717236 (1998-02-01), Shinkawata

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