Manufacturing process for a photodetector

Details Manufacturing process for a photodetector Manufacturing process for a photodetector

2011-03-15

2011-03-15

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S063000, C438S073000, C257SE31001

Reexamination Certificate

active

07906360

ABSTRACT:
A manufacturing process for a photo-detector is provided. The present manufacturing process for a photo-detector comprises the steps of: (a) providing a thin-film Ge on a cheap substrate including a first processing area and a second processing area; (b) performing a defect-reduction processing to at least one of the first processing area and the second processing area; and (c) forming a photo-detector element on the Ge.

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C.-Y. Yu et al. “Low-temperature fabrication and characterization of Ge-on-insulator structures”, Applied Physics Letters, 89, 101913 (2006), pp. 101913-1 through 101913-3.
B.-C. Hsu et al., “MOS Ge/Si quantum Dot Infrared Photodetectors with Quantum Dot and Wetting Layer Responses”, ISDRS, 2003, 2 pgs.

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