Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1998-10-15
2000-09-19
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438254, H01L 2120
Patent
active
061211079
ABSTRACT:
A method for manufacturing a capacitor includes the steps of a) forming a first sacrificial layer over the etching stop layer; b) partially removing the first sacrificial layer, the etching stop layer, and the dielectric layer to form a contact window, c) forming a first conducting layer over the first sacrificial layer and in the contact window, d) forming a second sacrificial layer over the first conducting layer, e) partially removing the second sacrificial layer, the first conducting layer, and the first sacrificial layer to expose a portion of the first sacrificial layer, f) forming a second conducting layer alongside the second sacrificial layer, the first conducting layer, and the portion of the first sacrificial layer, and g) removing the first and second sacrificial layers to expose the etching stop layer, wherein the remained first conducting layer and the second conducting layer construct a capacitor plate with a generally crosssectionally modified H-shaped structure. This structure can effectively increase the surface area of the capacitor.
REFERENCES:
patent: 5137842 (1992-08-01), Chan et al.
patent: 5721168 (1998-02-01), Wu
patent: 5763304 (1998-06-01), Tseng
patent: 5888863 (1999-03-01), Tseng
MacPherson Alan H.
Mosel Vitelic Inc.
Nguyen Tuan H.
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