Manufacturing of monolithically integrated pin structures

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates

Reexamination Certificate

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C438S459000

Reexamination Certificate

active

07067394

ABSTRACT:
Fabrication techniques for fabricating p-i-n structures that achieve a thin intrinsic layer and a small resistance across the p-i-n structure and thus a high response speed in a monolithically integrated circuit package. Germanium p-i-n structures may be fabricated over silicon or silicon-on-insulator substrates using silicon processing technologies.

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Chui, et al.; A Sub-400°C Germanium MOSFET Technology with High-K Dielectric and Metal Gate; 2002; IEEE; pps. 437-440.

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