Manufacturing methods for large area silicon carbide devices

Details Manufacturing methods for large area silicon carbide devices Manufacturing methods for large area silicon carbide devices

2006-11-14

2006-11-14

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Making regenerative-type switching device

C438S931000, C438S016000, C438S017000

Reexamination Certificate

active

07135359

ABSTRACT:
Large area silicon carbide devices, such as light-activated silicon carbide thyristors, having only two terminals are provided. The silicon carbide devices are selectively connected in parallel by a connecting plate. Silicon carbide thyristors are also provided having a portion of the gate region of the silicon carbide thyristors exposed so as to allow light of an energy greater than about 3.25 eV to activate the gate of the thyristor. The silicon carbide thyristors may be symmetric or asymmetrical. A plurality of the silicon carbide thyristors may be formed on a wafer, a portion of a wafer or multiple wafers. Bad cells may be determined and the good cells selectively connected by a connecting plate.

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