Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-03-05
2010-10-19
Pham, Ly D (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185280, C365S218000, C438S522000
Reexamination Certificate
active
07817477
ABSTRACT:
A manufacturing method, remanufacturing method and reshipping method for a semiconductor memory device capable of preventing the charge hold characteristic from deteriorating even if information data is repeatedly written and erased. The manufacturing method is for a semiconductor memory device having a plurality of memory cells in an FET structure formed on a semiconductor substrate, wherein each of the plurality of memory cells is to store a unit bit and hold information data. Preparing a plurality of memory cells, bits of the information data are written to the memory cells. After writing the information data bits to the memory cells, the memory cells are allowed to stand at a predetermined ambient temperature for a predetermined time. Thereafter, bits of the information data are written to the memory cells.
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Japanese Office Action; Notice of Reason for Rejection dated May 19, 2009; Japanese Patent Application No. 2007-091929 with English Translation.
Japanese Office Action “Notice of Reason for Rejection” dated Mar. 4, 2009 Japanese Application No. 2007-091929 with English Translation.
Oki Semiconductor Co., Ltd.
Pham Ly D
Studebaker Donald R.
Studebaker & Brackett PC
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