Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1992-07-13
1995-07-25
Marquis, Melvyn I.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430311, G03F 900, G03F 902
Patent
active
054360951
ABSTRACT:
One object of the present invention is to provide the reduced projection exposure method which enables the exposure of various and fine patterns in manufacturing process of semiconductor devices or semiconductor integrated circuit devices. Structure of the present invention to attain the above object is to carry out the reduced projection exposure using a phase shift mask provided with a prescribed correction pattern on the end of the mask pattern domain of a constant mode or the boundary of the mask pattern domain of plural modes. According to this structure, as the end effects etc. are canceled by the correction pattern, the various and fine patterns can be exposed.
REFERENCES:
patent: 5045417 (1991-09-01), Okamoto
"A 5.9 .mu.m.sup.2 Super Low Power SRAM Cell Using a New Phase-Shift Lithography", Yamanaka, et al, pp. 1831-1834 IEDM Tech. Dig.; Apr. 1990.
B. J. Lin; "Phase-Shifting and Other Challenges in Optical Mask Technology;" IBM-EF-15; Sep. 26, 1990.
Mizuno Fumio
Morita Masayuki
Moriuchi Noboru
Shirai Seiichiro
Hitachi , Ltd.
Hitachi VLSI Engineering Corp.
Johnson R.
Marquis Melvyn I.
LandOfFree
Manufacturing method or an exposing method for a semiconductor d does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Manufacturing method or an exposing method for a semiconductor d, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method or an exposing method for a semiconductor d will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-738785