Manufacturing method of thin film diode for liquid crystal displ

Details Manufacturing method of thin film diode for liquid crystal displ Manufacturing method of thin film diode for liquid crystal displ

1997-08-13

1999-03-09

Brown, Peter Toby

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438128, 438149, 438479, 438770, 438967, 257 59, 257 72, 257347, 257443, H01L 2100

Patent

active

058799605

ABSTRACT:
A thin film diode (8) between a data line (12) and a drive electrode (13), which is free from breakage in an upper layer film (4), is formed on one inner surface of a glass substrate (1) sealing a liquid crystal of a liquid crystal display device. To form such a thin film diode, a lower layer film (2) is formed on the glass substrate (1) such that the lower layer film (2) overlaps with the upper layer film (4) and the lower layer film (2) has a plurality of differences in level. An insulating film (3) is formed by oxidizing the surface of the lower layer film (2) with an anodic oxidation technique. The upper layer film (4) is formed, thereby completing the thin film diode. Alternately, an insulating film material (7, 7') may be formed either on the lower layer film (2) or on the peripheral region thereof in the form of a film, and the insulating film (3) may be formed by oxidizing the insulating film material (7, 7').

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Japanese Abstract of JP 1-177391 A, Jul. 13,1989.
Japanese Abstract of JP 58-178557 A, Oct. 19, 1983.
Japanese Abstract of JP 4-301097, Oct. 23, 1992.

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