Manufacturing method of thin film device substrate

Details Manufacturing method of thin film device substrate Manufacturing method of thin film device substrate

2007-08-14

2007-08-14

Malsawma, Lex (Department: 2823)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C257SE21570

Reexamination Certificate

active

10976846

ABSTRACT:
An object of the present invention is to prevent the thin film device formed by laser annealing from making, due to overheat, abnormal operations. Firstly, on a glass substrate101. a heat insulating film, a silicon oxide film and an amorphous silicon film are formed in succession, and the amorphous silicon film is irradiated from above with a laser beam of an excimer laser. After being molten, the amorphous silicon film undergoes recrystallization to form a polycrystalline silicon film. Subsequently, using the polycrystalline silicon film as an active layer, a TFT is formed, and then a plastic substrate is bonded onto the TFT, and finally the glass substrate is peeled off by way of the heat insulating film, whereby a transfer of the TFT is completed. Because the heat insulating film is removed, abnormality caused by overheat at the time of operation is well prevented from occurring.

REFERENCES:
patent: 6521511 (2003-02-01), Inoue et al.
patent: 8-288522 (1996-11-01), None
patent: 11-26733 (1999-01-01), None
patent: 11-212116 (1999-08-01), None
patent: 2000-91604 (2000-03-01), None

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