Manufacturing method of solid-state imaging device and...

Details Manufacturing method of solid-state imaging device and... Manufacturing method of solid-state imaging device and...

2006-08-16

2010-06-15

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257SE21544

Reexamination Certificate

active

07736937

ABSTRACT:
A manufacturing method of a solid-state imaging device, the device comprising: a semiconductor substrate; photodiodes each comprising a surface-side first conductivity type region formed adjacent to a surface of the semiconductor substrate and a second conductivity type region provided directly under the surface-side first conductivity type region; a second conductivity type vertical transfer region provided in the vicinity of the surface-side first conductivity type region; at least one first conductivity type inter-pixel isolation region provided under the vertical transfer region; and at least one first conductivity type overflow barrier region provided below the first conductivity type inter-pixel isolation region, the method comprising: a first step of forming the first conductivity type overflow barrier region in a semiconductor substrate; and a second step of ion-implanting first conductivity type impurity ions from a direction in which channeling tends to occur, to form at least one of the first conductivity type inter-pixel isolation region.

REFERENCES:
patent: 6707495 (2004-03-01), Harada
patent: 2004/0000681 (2004-01-01), Shinohara et al.
patent: 11-40794 (1999-02-01), None
patent: 2000-150848 (2000-05-01), None
patent: 2004-228140 (2004-08-01), None

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