Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2008-03-28
2010-10-26
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S458000, C438S459000, C438S149000, C438S370000, C438S402000, C438S406000, C438S407000, C438S473000, C257SE21120, C257SE21317, C257SE21319, C257SE21563, C257SE21568
Reexamination Certificate
active
07820524
ABSTRACT:
A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate.
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Search Report (Application No. 08005687.2) dated May 27, 2010.
Higa Eiji
Miyairi Hidekazu
Mizoi Tatsuya
Nagano Yoji
Shimomura Akihisa
Abdelaziez Yasser A
Garber Charles D
Robinson Eric J.
Robinson Intellectual Propery Law Office, P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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