Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2011-06-07
2011-06-07
Dang, Phuc T (Department: 2892)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S029000, C438S458000, C257S066000, C257S067000
Reexamination Certificate
active
07955949
ABSTRACT:
There is provided a method of manufacturing an SOI substrate which is practicable even when a supporting substrate having a low allowable temperature limit is used. A separation layer is formed in a region at a certain depth from a surface of a semiconductor substrate, and a first heat treatment is conducted when a semiconductor layer on the separation layer is bonded to the supporting substrate and separated. A second heat treatment is conducted to the supporting substrate to which the semiconductor layer is bonded. The second heat treatment is conducted at a temperature which is equal to or higher than the temperature of the first heat treatment and does not exceed a strain point of the supporting substrate. When the first heat treatment and the second heat treatment are conducted at the same temperature, a treatment time of the second heat treatment may be set to be longer.
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Iikubo Yoichi
Ohnuma Hideto
Sato Takayoshi
Dang Phuc T
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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