Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2011-05-10
2011-05-10
Smith, Bradley K (Department: 2894)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S455000
Reexamination Certificate
active
07939426
ABSTRACT:
An SOI substrate is manufactured by a method in which a first insulating film is formed over a first substrate over which a plurality of first single crystal semiconductor films is formed; the first insulating film is planarized; heat treatment is performed on a single crystal semiconductor substrate attached to the first insulating film; a second single crystal semiconductor film is formed; a third single crystal semiconductor film is formed using the first single crystal semiconductor films and the second single crystal semiconductor films as seed layers; a fragile layer is formed by introducing ions into the third single crystal semiconductor film; a second insulating film is formed over the third single crystal semiconductor film; heat treatment is performed on a second substrate superposed on the second insulating film; and a part of the third single crystal semiconductor film is fixed to the second substrate.
REFERENCES:
patent: 5374564 (1994-12-01), Bruel
patent: 6191007 (2001-02-01), Matsui et al.
patent: 6251754 (2001-06-01), Ohshima et al.
patent: 6372609 (2002-04-01), Aga et al.
patent: 6818529 (2004-11-01), Bachrach et al.
patent: 7405136 (2008-07-01), Delprat et al.
patent: 7767547 (2010-08-01), Isaka et al.
patent: 05-211128 (1993-08-01), None
patent: 11-074209 (1999-03-01), None
patent: 11-163363 (1999-06-01), None
patent: 2000-124092 (2000-04-01), None
patent: 2003-257804 (2003-09-01), None
patent: 2007-251129 (2007-09-01), None
Isaka Fumito
Kato Sho
Komatsu Ryu
Mizoi Tatsuya
Nei Kosei
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Smith Bradley K
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