Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1998-05-20
1999-11-09
Utech, Benjamin
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117917, C30B 3500
Patent
active
059806303
ABSTRACT:
In a single crystal manufacturing method by a horizontal magnetic field applied CZ method wherein coils are disposed interposing a crucible coaxially with each other, the coils constituting superconductive electromagnets of a magnetic field application apparatus and the silicon crystal is pulled from melt in the crucible while applying a horizontal magnetic field to the melt; an elavation apparatus capable of finely adjusting relative positions of the superconductive electromagnets and the crcucible in a vertical direction is disposed. The descent of a central portion Cm in a depth direction of the melt is canceled by elevating the crucible with the elevating apparatus, the descent being accompanied with proceeding of process of pulling the single crystal, thereby a coil central axis Cc of the superconductive electromagnets always passes through the central portion Cm or below this portion. Compared with the conventional HMCZ method, an uniformity of an intensity distribution of the magnetic field applied to the melt is increased so that a suppression effect on the melt convection all over the crucible is enhanced.
REFERENCES:
patent: 4565671 (1986-01-01), Matsutani et al.
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patent: 5792255 (1998-08-01), Iino et al.
patent: 5827366 (1998-10-01), Watanabe
Iino Eiichi
Kimura Masanori
Takano Kiyotaka
Yamagishi Hirotoshi
Shin-Etsu Handotai & Co., Ltd.
Snider Ronald R.
Umez-Eronini Lynette T.
Utech Benjamin
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