Manufacturing method of silicon on insulator wafer

Details Manufacturing method of silicon on insulator wafer Manufacturing method of silicon on insulator wafer

2007-10-02

2007-10-02

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C257SE21122

Reexamination Certificate

active

11232722

ABSTRACT:
Provided is a method of manufacturing a silicon on insulator (SOI) substrate, which includes the steps of (a) forming a buried oxidation layer to a predetermined depth of a first wafer and forming an oxidation layer on a surface of the first wafer; (b) bonding a second wafer onto the first wafer; (c) selectively removing the oxidation layer so as to expose a bottom surface of the first wafer; (d) selectively removing the exposed bottom silicon layer of the first wafer using the buried oxidation layer as an etch stop layer; and (e) removing the buried oxidation layer to expose a top surface of the first wafer, and thinning the exposed top surface of the first wafer to a predetermined thickness, so that a process can be relatively simple and can be readily carried out, thereby manufacturing an SOI substrate having a uniform silicon thickness of high quality and an ultra thin characteristic.

REFERENCES:
patent: 6306730 (2001-10-01), Mitani et al.
patent: 6770507 (2004-08-01), Abe et al.
patent: 6884696 (2005-04-01), Aga et al.
patent: 7084046 (2006-08-01), Mitani et al.
patent: 2006/0121696 (2006-06-01), Shiota et al.
Materials Science and Engineering B72 (2000) 150-155.
Applied Physics Letters, vol. 80, No. 5, Feb. 4, 2002, 880-882.

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