Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1982-11-30
1984-04-24
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Assembling or joining
29591, 204192C, 204192SP, 357 67, 427 93, H01L 21283
Patent
active
044439300
ABSTRACT:
A method of forming on a substrate a layer of silicon-rich metal silicide such as tungsten silicide, WSi.sub.x where x>2 by cosputtering a tungsten disilicide (WSi.sub.2) target and a doped silicon target on to the substrate which is maintained at room temperature. When the silicon-rich silicide is deposited on a doped polysilicon layer the resulting silicon-rich metal silicide/polysilicon sandwich layer has a low resistivity and is suitable for forming therefrom gates and interconnecting conductors for integrated circuit devices.
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patent: 4285761 (1981-08-01), Fatula et al.
patent: 4337476 (1982-06-01), Fraser et al.
Crowder et al., "1 .mu.m MOSFET VLSI Technology: Part VII-Metal Silicide Interconnection Technology-A Future Perspective", IEEE Transactions on Electron Devices, vol. ED-26, No. 4, Apr. 1979, pp. 369-371.
Mochizuki et al., "Film Properties of MoSi.sub.2 and their Application to Self-Aligned MoSi.sub.2 Gate MOSFET", IEEE Transactions on Electron Devices, vol. ED-27, No. 8, Aug. 1980, pp. 1431-1435.
Tsai et al., "One-Micron Polycide (WSi.sub.2 on Poly-Si) MOSFET Technology", J. Electrochem. Soc.: Solid-State Science and Technology, vol. 128, No. 10, Oct. 1981, pp. 2207-2214.
Murarka, S. P., "Refractory Silicides for Low Resistivity Gates and Interconnects", IEEE International Electron Devices Meeting 1979, pp. 455-457.
S. P. Murarka, "Silicides: Which, Why and How", J. Electrochemical Society, vol. 81-1, pp. 551-561, 1981.
Murarka et al., "Refractory Silicides of Titanium and Tantalum for Low-Resistivity Gates and Interconnects", IEEE Transactions on Electron Devices, vol. ED-27, No. 8, Aug. 1980, pp. 1409-1417.
Coe Mary E. B.
Hwang Thomas J.
Rogers Steven H.
Cavender J. T.
Hearn Brian E.
NCR Corporation
Salys Casimer K.
Schiavelli Alan E.
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