Manufacturing method of SiC Schottky diode

Details Manufacturing method of SiC Schottky diode Manufacturing method of SiC Schottky diode

1995-06-02

1998-08-04

Niebling, John

Semiconductor device manufacturing: process

Forming schottky junction

Compound semiconductor

438571, H01L 2128

Patent

active

057893110

ABSTRACT:
A Schottky electrode is formed on an n-type SiC base member with an Al--Ti alloy or by laying Al films and Ti films alternately, and a resulting structure is subjected to a heat treatment of 600.degree. C. to 1,200.degree. C. A p-type SiC layer may be formed around the Schottky junction so as to form a p-n junction with the n-type SiC base member.

REFERENCES:
patent: 4990994 (1991-02-01), Furukawa et al.
patent: 5045497 (1991-09-01), Hayashi et al.
patent: 5124779 (1992-06-01), Furukawa et al.
patent: 5221638 (1993-06-01), Ohtsuka et al.
patent: 5270252 (1993-12-01), Papanicolaou
patent: 5270534 (1993-12-01), Palmour
patent: 5389799 (1995-02-01), Uemoto
patent: 5397717 (1995-03-01), Davis et al.
patent: 5502003 (1996-03-01), Ogino et al.
Ueno et al, Al/Ti Schottky Barrier Diodes With The Guard-Ping Termination for GH-SiC.
Schottky Barrier Diodes, Institute of Physis Conference Ser. No. 142.
On Silicon Carbide and Related Materials 1995. Kyoto, Japan.
K. Ueno et al., "The Al/Ti Schottky Diode of 6H-SiC Fabricated by LOCOS Process", Preprint for the 1994 Fall Meeting of The Japan Society of Applied Physics No. 19p-MH-6, (1994). (abstract in English and Japanese).
J.R. Waldrop et al., "Metal Schottky Barrier Contacts to Alpha 6H-SiC", J. Appl. Phys., 72(10):4757-4760 (1992).
J.R. Waldrop et al., "Schottky Barrier Height and Interface Chemistry of Annealed Metal Contacts to Alpha 6H-SiC: Crystal Face Dependence", J. Appl. Phys. Lett. 62(21):2685-2687 (1993).
T. Kimoto et al. "High-Voltage (>1KV) SiC Schottky Barrier Diodes With Low On-Resistances", IEEE Elect. Dev. Lett., 14(12):548-550 (1993).
D.E. Iannou et al., "The Effect of Heat Treatment on Au Schottky Contacts on .beta.-SiC", IEEE Trans. Elect. Dev., 34(8):1694-1699.
Japanese Publication 28p-ZR-15, "The Local Oxidation of 6H-SiC Crystal" Fall 1993.
M. Bhatnagar et al. "Silicon-Carbide High Voltage (400V) Schottky Barrier Diodes", IEEE Electron Device, vol. 13, No. 10, pp. 501, 503,Letters, Oct. 1992.

Affiliated with

Also associated with

Rating

Manufacturing method of SiC Schottky diode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of SiC Schottky diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of SiC Schottky diode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1176681