Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1997-02-14
1999-09-14
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 85, 117 88, 117 94, 117106, C30B 2592
Patent
active
059517557
ABSTRACT:
A manufacturing method for manufacturing a semiconductor substrate has first annealing step for annealing silicon single crystal to permit oxygen embryos or oxygen precipitations grown from the oxygen embryos precipitating in a predetermined region and a second annealing step for permitting said oxygen embryos or said oxygen precipitations to contract using a second temperature range higher than the first temperature range, said second temperature range being high enough to contract said oxygen embryos and low enough to prevent redistribution of boron from affecting to device characteristics, to form a denuded zone in said predetermined region at the principal surface. An inspection method for inspecting a semiconductor substrate further has measuring step, subsequent to said first and second annealing steps for measuring the density of oxygen embryos grown into oxygen precipitations among those precipitated in said silicon single crystal.
REFERENCES:
patent: 5141894 (1992-08-01), Bisaro et al.
patent: 5769942 (1998-06-01), Maeda
Akita Keiko
Hoshi Tadahide
Miyashita Moriya
Numano Masanori
Ogino Masanobu
Hiteshew Felisa
Kabushiki Kaisha Toshiba
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