Manufacturing method of semiconductor multi-layer film and semic

Details Manufacturing method of semiconductor multi-layer film and semic Manufacturing method of semiconductor multi-layer film and semic

1992-06-17

1993-12-14

Kunemund, Robert

Fishing, trapping, and vermin destroying

437151, H01L 2120

Patent

active

052702464

ABSTRACT:
When an n-type semiconductor layer is formed on a p-type semiconductor layer in a device such as a semiconductor multi-layer film, the n-type semiconductor layer is formed by adding a p-type dopant as well as an n-type dopant simultaneously. In a double heterostructure semiconductor laser including an AlGaInP active layer and AlGaInP cladding layers, when an n-type current blocking layer is formed on the p-type cladding layer, the n-type current blocking layer is formed by adding a p-type dopant as well as an n-type dopant simultaneously.

REFERENCES:
patent: 4131904 (1978-12-01), Lidany et al.
patent: 4889830 (1989-12-01), Springthorpe et al.
patent: 4980313 (1990-12-01), Takahashi
T. Kawabata et al in "Metalorganic chemical vapor deposition of InGaAsP/InP layers and fabrication of 1.3.mu. planar Buried Heterostructure lasers" in J. Appl. Phys. 64 (1988), pp. 3684-3688.

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