Manufacturing method of semiconductor laser with non-absorbing m

Details Manufacturing method of semiconductor laser with non-absorbing m Manufacturing method of semiconductor laser with non-absorbing m

1989-12-13

1991-01-22

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG95, 148DIG25, 437112, 437133, H01L 2120

Patent

active

049870963

ABSTRACT:
An InGaAlP NAM structure laser is formed with a double-heterostructure section disposed on an n-type GaAs substrate. The double-heterostructure section includes a first cladding layer of n-type InGaAlP, a non-doped InGaP active layer, and a second cladding layer of p-type InGaAlP. An n-type GaAs current-blocking layer having a stripe opening and a p-type GaAs contact layer are sequentially formed on the second cladding layer by MOCVD crystal growth. A low-energy band gap region is defined in a central region of the active layer located immediately below the stripe opening. A high-energy band gap region is defined in a peripheral region of the active layer corresponding to a light output end portion of the laser and located immediately below the current-blocking layer. Therefore, self absorption of an oscillated laser beam at the output end portion can be reduced or prevented.

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