Manufacturing method of semiconductor laser of patterned-substra

Details Manufacturing method of semiconductor laser of patterned-substra Manufacturing method of semiconductor laser of patterned-substra

1993-06-15

1994-08-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437905, 148DIG95, H01L 21205

Patent

active

053366352

ABSTRACT:
A semiconductor laser of a patterned-substrate type comprises the patterned-substrate having a sloped portion and a planar portion, and a plurality of semiconductor layers formed on the patterned-substrate including a heterostructure. By controlling condition for growing a specific semiconductor layer, a preferable ratio of a sloped portion thickness to a planar portion thickness of the semiconductor layer can be obtained, which enables a lasing current of the laser to be confined in a restricted region, and this results in obtaining a high efficiency and a high power output of the semiconductor laser.

REFERENCES:
patent: 4404678 (1983-09-01), Aiki et al.
patent: 4569721 (1986-02-01), Hayakawa et al.
patent: 4946802 (1990-08-01), Shima et al.
patent: 5149670 (1992-09-01), Isshiki
patent: 5202285 (1993-04-01), Sugano et al.
Guotong Du, Xiaobo Zhang, Fanghai Zhao and Dingsan Gao, IEEE Journal of Quantum Electronics, "Terraced Substrate Inner Stripe Visible Semiconductor Laser and Its Arrays", vol. 26, No. 3, Mar. 1990.
Jun-ichi Hashimoto, Tsukuru Katsuyama, Jiro Shinkai, Ichiro Yoshida and Hideki Hayashi, Applied Physics Letters, "Effects of Strained-Layer Structures on the Threshold Current Density of AlFaln/FalnP Visible Lasers", 58(9), Mar. 4, 1991.
A. Furuya, M. Kondo, M. Sugano, T. Anayama, K. Domen, T. Tanahashi and T. Mikawa, Electronics Letters, "Small Beam Astigmatism of AlGalnP Visible Laser Diode Using Selfaligned Bend Waveguide", vol. 28, No. 12, Jun. 4, 1992.
T. Murakami, et al. "High-Power AlGaAs Lasers With a Thin Tapered-Thickness Active Layer" Electronics Letters, vol. 22, No. 4 (Feb. 1986), pp. 217-218.

Affiliated with

Also associated with

Rating

Manufacturing method of semiconductor laser of patterned-substra does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of semiconductor laser of patterned-substra, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of semiconductor laser of patterned-substra will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-215870