Manufacturing method of semiconductor integrated circuit...

Details Manufacturing method of semiconductor integrated circuit... Manufacturing method of semiconductor integrated circuit...

2011-06-07

2011-06-07

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S238000, C438S239000, C438S256000, C438S381000, C438S399000, C257SE21582, C257SE21584, C257SE21665

Reexamination Certificate

active

07955872

ABSTRACT:
In the case where a laminated structure formed by laminating tunneling magnetoresistive films are processed by ion milling or the like, scattered substances of a material constituting the tunneling magnetoresistive film are deposited onto side walls of the laminated structure, or contaminate the inside of a device for processing. Accordingly, it has been difficult to manufacture a magnetic memory or a semiconductor device on which the magnetic memory is mounted, with stable characteristics.Side wall spacers are formed on side walls of a conductive layer arranged above a tunneling magnetoresistive film, and scattered substances of a material constituting the tunneling magnetoresistive film during processing are deposited. Thereafter, by removing the side wall spacers, the redepositions of the material are also removed. The side wall spacers used are of one kind or two kinds.

REFERENCES:
patent: 7468542 (2008-12-01), Hayakawa et al.
patent: 2003/0203510 (2003-10-01), Hineman et al.
patent: 2005/0160585 (2005-07-01), Kim
patent: 2006/0022237 (2006-02-01), Byun et al.
patent: 2005-116888 (2005-04-01), None

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