Manufacturing method of semiconductor devices

Semiconductor device manufacturing: process – Semiconductor substrate dicing – By electromagnetic irradiation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S464000, C438S691000, C257SE21602

Reexamination Certificate

active

07923351

ABSTRACT:
In a method of manufacturing semiconductor chips by dicing individual semiconductor devices from a semiconductor wafer, masks formed for plasma dicing in which a semiconductor wafer is divided by conducting plasma etching are removed by mechanical grinding using a grinding head. Accordingly, by removing the masks for plasma dicing using mechanical grinding, generation of reaction products is prevented when removing the masks, so that the dicing can be conducted without causing quality deterioration due to the accumulated particles.

REFERENCES:
patent: 5963816 (1999-10-01), Wang et al.
patent: 6225193 (2001-05-01), Simpson et al.
patent: 6897128 (2005-05-01), Arita
patent: 2008/0153283 (2008-06-01), Abdelrahman et al.
patent: 2004-172364 (2004-06-01), None
patent: 2004/047165 (2004-06-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Manufacturing method of semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of semiconductor devices will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2673512

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.