Semiconductor device manufacturing: process – Semiconductor substrate dicing – By electromagnetic irradiation
Reexamination Certificate
2011-04-12
2011-04-12
Smoot, Stephen W (Department: 2813)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
By electromagnetic irradiation
C438S464000, C438S691000, C257SE21602
Reexamination Certificate
active
07923351
ABSTRACT:
In a method of manufacturing semiconductor chips by dicing individual semiconductor devices from a semiconductor wafer, masks formed for plasma dicing in which a semiconductor wafer is divided by conducting plasma etching are removed by mechanical grinding using a grinding head. Accordingly, by removing the masks for plasma dicing using mechanical grinding, generation of reaction products is prevented when removing the masks, so that the dicing can be conducted without causing quality deterioration due to the accumulated particles.
REFERENCES:
patent: 5963816 (1999-10-01), Wang et al.
patent: 6225193 (2001-05-01), Simpson et al.
patent: 6897128 (2005-05-01), Arita
patent: 2008/0153283 (2008-06-01), Abdelrahman et al.
patent: 2004-172364 (2004-06-01), None
patent: 2004/047165 (2004-06-01), None
Panasonic Corporation
Pearne & Gordon LLP
Smoot Stephen W
LandOfFree
Manufacturing method of semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Manufacturing method of semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of semiconductor devices will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2673512