Manufacturing method of semiconductor devices

Details Manufacturing method of semiconductor devices Manufacturing method of semiconductor devices

1991-07-31

1992-03-31

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 32, 437 35, 437 59, 148DIG150, H01L 21265, H01L 2186, H01L 2970

Patent

active

051008106

ABSTRACT:
On the surface of an insulating substrate, a semi-conductor layer composed of a semiconductor layer of a first conductivity type on which a high-concentration semiconductor layer of the first conductivity type is formed. By selectively etching the semiconductor layer, the high-concentration external base region of the first conductivity is left, and at the same time, only a thicker prospective internal base region just under the external base region and a prospective emitter region and prospective collector region, which are located on both sides of the prospective internal base region and have steps between themselves and the prospective internal base region, are left to form island regions. A sidewall insulating film is formed which covers at least the sidewalls on the prospective collector region side among sidewalls of the external base region and sidewalls at the steps of the prospective internal base region adjoining the sidewalls of the external base region. The emitter region and collector region of the second conductivity type are formed by ion implantation perpendicular to the substrate with the insulating film covering the external base region and the sidewall insulating film as blocking mask.

REFERENCES:
patent: 4199773 (1980-04-01), Goodman et al.
patent: 4965872 (1990-10-01), Vasuder
IEEE, EDL-8, No, 3, p. 104, 1987; J. C. Sturm et al.; Mar. , 1987, "A Lateral Silicon-On-Insulator Bipolar Transistor with a Self-Aligned Base Contact ".

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