Manufacturing method of semiconductor devices

Details Manufacturing method of semiconductor devices Manufacturing method of semiconductor devices

1977-07-07

1979-03-06

Esposito, Michael F.

Coating processes

Electrical product produced

Condenser or capacitor

148174, 148187, 148188, 148191, 427248R, 427248E, 427399, H01L 21225, B05D 512

Patent

active

041431782

ABSTRACT:
A manufacturing method of semiconductor device having a single layer or multilayer of polycrystalline semiconductor including doped impurity is provided which comprises a step of forming a first polycrystalline semiconductor layer with doped impurity on a semiconductor substrate and another step of forming a second polycrystalline semiconductor layer without doped impurity on the first polycrystalline semiconductor layer. The manufacturing method of the invention provides excellent MOS FET's in the semiconductor device of which the threshold voltage varies little. High reliable semiconductor device may further be manufactured with a high yield.

REFERENCES:
patent: 3460007 (1969-08-01), Scott, Jr.
patent: 3651385 (1972-03-01), Kobayash
patent: 3873371 (1975-03-01), Wolf
patent: 3969168 (1976-07-01), Kuhn
patent: 4001861 (1977-01-01), Carner

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